Semiconductor electronics: materials, devices and simple circuits is an important topic in the Physics section in MHT CET exam. Practising this topic will increase your score overall and make your conceptual grip on MHT CET exam stronger.
This article gives you a full set of MHT CET PYQs for Semiconductor electronics: materials, devices and simple circuits with explanations for effective preparation. Practice of MHT CET Physics PYQs including Semiconductor electronics: materials, devices and simple circuits questions regularly will improve accuracy, speed, and confidence in the MHT CET 2026 exam.
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MHT CET PYQs for Semiconductor electronics: materials, devices and simple circuits with Solutions
1.
For a transistor, the current ratio $'\beta'_{dc}$ is defined as the ratio of- collector current to emitter current
- collector current to base current
- base current to collector current
- emitter current to collector current
2.
A transistor is used as a common emitter amplifier with a load resistance 2 kΩ. The input resistance is 150 Ω. Base current is changed by 20 μA which results in a change in collector current by 1.5 mA. The voltage gain of the amplifier is
- 1100
- 1200
- 900
- 1000
3.
In a p-n junction diode, if the forward bias voltage is increased, how does the current flowing through the diode change?- The current increases exponentially.
- The current increases linearly.
- The current remains constant.
- The current decreases exponentially.
4.
In an oscillator, for sustained oscillations, Barkhausen criterion is $A\beta$ equal to ($A =$ voltage gain without feedback, $\beta =$ feedback factor)- $zero$
- $\frac{1}{2}$
- $1$
- $2$
5.
The reverse saturation current (I0) of a silicon diode at 27°C is \( 10^{-6} \) A. What will be the approximate value of I0 at 67°C? (Assume \( I_0 \) doubles for every 10°C rise in temperature)- \( 1.6 \times 10^{-6} \) A
- \( 1.6 \times 10^{-5} \) A
- \( 8.0 \times 10^{-6} \) A
- \( 4.0 \times 10^{-6} \) A
6.
The charge carriers in a $ p $ -type semiconductor are- electrons only
- holes only
- holes in larger numbers and electrons in smaller numbers
- holes and electrons in equal numbers
7.
In a p-type semiconductor
- electrons are minority carriers and pentavalent atoms are dopants
- electrons are majority carries and pentavalent atoms are dopants
- holes are minority carriers and trivalent atoms are dopants
- holes are majority carriers and trivalent atoms are dopants
8.
A transistor is used as a common emitter amplifier with a load resistance 2 K$\Omega$. the input resistance is 150 $\Omega$. Base current is changed by 20 $\mu$A which results in a change in collector current by $1.5\, mA$. The voltage gain of the amplifier is- 900
- 1000
- 1100
- 1200
9.
A radioactive substance has a half-life of \( 10 \, \text{hours} \). If the initial amount of the substance is \( 200 \, \text{g} \), how much of the substance remains after \( 30 \, \text{hours} \)?- \( 25 \, \text{g} \)
- \( 50 \, \text{g} \)
- \( 100 \, \text{g} \)
- \( 12.5 \, \text{g} \)
10.
In a semiconductor, the intrinsic carrier concentration is \( 1.5 \times 10^{10} \, \text{cm}^{-3} \) at room temperature. If the energy band gap of the semiconductor is \( 1.1 \, \text{eV} \), calculate the intrinsic carrier concentration at a temperature of \( 500 \, \text{K} \). The intrinsic carrier concentration at room temperature (\( 300 \, \text{K} \)) is known to vary with temperature according to the relation: \[ n_i(T) = n_{i0} \left( \frac{T}{T_0} \right)^{3/2} \exp \left( -\frac{E_g}{2k} \left( \frac{1}{T} - \frac{1}{T_0} \right) \right) \] Where: - \( n_{i0} = 1.5 \times 10^{10} \, \text{cm}^{-3} \), - \( T_0 = 300 \, \text{K} \), - \( E_g = 1.1 \, \text{eV} \), - \( k = 8.617 \times 10^{-5} \, \text{eV/K} \), - \( T = 500 \, \text{K} \).- \( 3.0 \times 10^{12} \, \text{cm}^{-3} \)
- \( 6.2 \times 10^{12} \, \text{cm}^{-3} \)
- \( 8.5 \times 10^{13} \, \text{cm}^{-3} \)
- \( 1.2 \times 10^{14} \, \text{cm}^{-3} \)
11.
What is the output of a NAND gate when both inputs are HIGH?- \( \text{HIGH} \)
- \( \text{LOW} \)
- \( \text{Alternates between HIGH and LOW} \)
- \( \text{Indeterminate} \)
12.
In a p-n junction diode, what happens to the width of the depletion region when the forward bias is increased?- It increases.
- It decreases.
- It remains the same.
- It first increases and then decreases.
13.
Photodiode is a device- which is always operated in reverse bias
- which is always operated in forward bias
- in which photo current is independent of intensity of incident radiation
- which may be operated in forward or reverse bias
14.
In a silicon semiconductor at room temperature, the intrinsic carrier concentration is \( 1.5 \times 10^{16} \, \text{m}^{-3} \). Calculate the energy band gap of the silicon if the intrinsic carrier concentration is given by: \[ n_i = \sqrt{N_c N_v} e^{-E_g / 2kT} \] Where: - \( N_c = 2.8 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the conduction band, - \( N_v = 1.04 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the valence band, - \( k = 1.38 \times 10^{-23} \, \text{J/K} \) is the Boltzmann constant, - \( T = 300 \, \text{K} \) is the temperature.- \( 1.1 \, \text{eV} \)
- \( 0.9 \, \text{eV} \)
- \( 2.0 \, \text{eV} \)
- \( 0.7 \, \text{eV} \)
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