GUJCET PYQs for Semiconductor electronics: materials, devices and simple circuits with Solutions: Practice GUJCET Previous Year Questions

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Yashodeep Mahurkar

Updated on - Feb 12, 2026

Semiconductor electronics: materials, devices and simple circuits is an important topic in the Physics section in GUJCET exam. Practising this topic will increase your score overall and make your conceptual grip on GUJCET exam stronger.

This article gives you a full set of GUJCET PYQs for Semiconductor electronics: materials, devices and simple circuits with explanations for effective preparation. Practice of GUJCET Physics PYQs including Semiconductor electronics: materials, devices and simple circuits questions regularly will improve accuracy, speed, and confidence in the GUJCET 2026 exam.

GUJCET PYQs for Semiconductor electronics: materials, devices and simple circuits with Solutions

1.
In a transistor amplifier, the two AC current gains $\alpha $ and $ \beta $ are defined as $\alpha=\frac{\partial I_C}{\partial I_E} $ and $ \beta =\frac{\partial I_C}{\partial I_B}$ the relation between $\alpha$ and $\beta$ is
- $\beta=\frac{1-\alpha}{\alpha}$
- $\beta=\frac{\alpha}{1-\alpha}$
- $\beta=\frac{\alpha}{1+\alpha}$
- $\beta=\frac{1+\alpha}{\alpha}$
View Solution
2.
In a p-n junction diode, when it is forward biased, what happens?
- The potential barrier decreases
- The potential barrier increases
- There is a large current flow
- There is a small current flow
View Solution
3.
A pure Ge specimen is doped with Al. The number density of acceptor atoms is approximately 10$^{21} m^{-3}$. If density of electron hole pair in an intrinsic semiconductor is approximately 10$^{19} m^{-3}$, the number density of electrons in the specimen is
- $10^4 m^{-3}$
- $10^2 m^{-3}$
- $10^{17} m^{-3}$
- $10^{15} m^{-3}$
View Solution
4.
n-type semiconductor is obtained on doping intrinsic germanium by
- gold
- boron
- aluminium
- phosphorus
View Solution

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GUJCET PYQs for Semiconductor electronics: materials, devices and simple circuits with Solutions

1.In a transistor amplifier, the two AC current gains $\alpha $ and $ \beta $ are defined as $\alpha=\frac{\partial I_C}{\partial I_E} $ and $ \beta =\frac{\partial I_C}{\partial I_B}$ the relation between $\alpha$ and $\beta$ is

2.In a p-n junction diode, when it is forward biased, what happens?

3.A pure Ge specimen is doped with Al. The number density of acceptor atoms is approximately 10$^{21} m^{-3}$. If density of electron hole pair in an intrinsic semiconductor is approximately 10$^{19} m^{-3}$, the number density of electrons in the specimen is

4.n-type semiconductor is obtained on doping intrinsic germanium by

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Structure based on different categories

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1.
In a transistor amplifier, the two AC current gains $\alpha $ and $ \beta $ are defined as $\alpha=\frac{\partial I_C}{\partial I_E} $ and $ \beta =\frac{\partial I_C}{\partial I_B}$ the relation between $\alpha$ and $\beta$ is

2.
In a p-n junction diode, when it is forward biased, what happens?

3.
A pure Ge specimen is doped with Al. The number density of acceptor atoms is approximately 10$^{21} m^{-3}$. If density of electron hole pair in an intrinsic semiconductor is approximately 10$^{19} m^{-3}$, the number density of electrons in the specimen is

4.
n-type semiconductor is obtained on doping intrinsic germanium by